HY5S5B6GLFP-H |
Part Number | HY5S5B6GLFP-H |
Manufacturer | Hynix Semiconductor |
Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Apr. 2006 1 256Mbit (16Mx16bit) Mobile SDR M... |
Features |
● Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) ● ● MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst Read or Write operation, a different bank is activated and burst Read or Write for that bank is performed - During auto precharge burst Read or Write, burst Read or Write for a different bank is performed ● Power Supply Voltage : VDD = 1.8V, VDDQ = 1.8V LVCMOS compatible I/O Interface Low Voltage int... |
Document |
HY5S5B6GLFP-H Data Sheet
PDF 2.99MB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HY5S5B6GLFP-6 |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory | |
2 | HY5S5B6GLFP-6E |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory | |
3 | HY5S5B6GLFP-HE |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory | |
4 | HY5S5B6GLFP-S |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory | |
5 | HY5S5B6GLFP-SE |
Hynix Semiconductor |
256Mbit (16Mx16bit) Mobile SDR Memory |