EIA1819-2P |
Part Number | EIA1819-2P |
Manufacturer | Excelics Semiconductor |
Description | Excelics • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.0/+32.5dBm TYPICAL P1dB OUTPUT POW... |
Features |
HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE
EIA/EIB1819-2P
Not recommended for new designs. Contact factory. Effective 03/2003 18.7-19.7GHz, 2W Internally Matched Power FET
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1819-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=18.7-19.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=18.7-19.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficienc... |
Document |
EIA1819-2P Data Sheet
PDF 49.17KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | EIA1819-1P |
Excelics Semiconductor |
18.7-19.7GHz 1W Internally Matched Power FET | |
2 | EIA1818-1P |
Excelics Semiconductor |
18.15-18.75GHz 1W Internally Matched Power FET | |
3 | EIA1818-2P |
Excelics Semiconductor |
18.15-18.75GHz 2W Internally Matched Power FET | |
4 | EIA1011-2P |
Excelics Semiconductor |
2W Internally Matched Power FET | |
5 | EIA1011-4P |
Excelics Semiconductor |
10.7-11.7GHz 4W Internally Matched Power FET |