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M58LR256KB |
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| Part Number | M58LR256KB |
| Manufacturer | Numonyx |
| Description | ..... 8 Signal descriptions... . . . . ... |
| Features |
■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 54 MHz, 66 MHz – Asynchronous page read mode – Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time – 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple bank memory array: 8 Mbit banks for the M58LR128KT/B 16 Mbit banks for the M58LR256KT/B – Parameter blocks (top or bottom location) Dual operations – Program/erase in... |
| Document |
 M58LR256KB Data Sheet
PDF 2.03MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M58LR256KT |
Numonyx |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories |
|
| 2 | M58LR256GL |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories |
|
| 3 | M58LR256GU |
STMicroelectronics |
128 and 256Mbit 1.8V supply Flash memories |
|
| 4 | M58LR128FB |
ST Microelectronics |
Flash Memory |
|
| 5 | M58LR128FT |
ST Microelectronics |
Flash Memory |
|