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IRF7342PBF |
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| Part Number | IRF7342PBF |
| Manufacturer | International Rectifier |
| Description | l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -55V RDS(on) = 0.105Ω 6 5 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... |
| Features |
is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junct... |
| Document |
 IRF7342PBF Data Sheet
PDF 180.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7342PbF |
Infineon |
Power MOSFET |
|
| 2 | IRF7342 |
Infineon |
Power MOSFET |
|
| 3 | IRF7342 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF7342D2 |
International Rectifier |
MOSFET & Schottky Diode |
|
| 5 | IRF7342D2PBF |
International Rectifier |
MOSFET & Schottky Diode |
|