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IPUH6N03LB |
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| Part Number | IPUH6N03LB |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (... |
| Features |
J-STD20 and JESD22
Rev. 0.3
page 1
2006-05-15
www.DataSheet.in
IPUH6N03LB
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current I GSS R DS(on... |
| Document |
 IPUH6N03LB Data Sheet
PDF 334.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPUH6N03LAG |
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| 2 | IPU04N03LA |
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| 4 | IPU050N03L |
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| 5 | IPU050N03LG |
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