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K6F4016U4G |
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| Part Number | K6F4016U4G |
| Manufacturer | Samsung semiconductor |
| Description | The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of syst... |
| Features |
• • • • • • Preliminary CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F4016U4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current. 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three... |
| Document |
 K6F4016U4G Data Sheet
PDF 155.08KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F4016U4G-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| 2 | K6F4016U6G |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F4016U6G-F |
Samsung semiconductor |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F4016R4E |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F4016R4E-F |
Samsung semiconductor |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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