M30L0R7000T0 |
Part Number | M30L0R7000T0 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | ..... . . . . . . . . . . 6 Figure 2. Table 1. Figure 3. Table 2. Figure 4. Logic Diagram . . . . . . . . . ... |
Features |
SUMMARY
■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous Page Read mode – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Program MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read ... |
Document |
M30L0R7000T0 Data Sheet
PDF 1.27MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | M30L0R7000B0 |
STMicroelectronics |
128-Mbit (8Mb x16 Multiple Bank Multi-Level Burst) 1.8V Supply Flash Memory | |
2 | M30L40C |
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Dual Common-Cathode Schottky Rectifier | |
3 | M30L45C |
Vishay |
Dual Common-Cathode Schottky Rectifier | |
4 | M30LW128D |
ST Microelectronics |
128 Mbit (two 64Mbit / x8/x16 / Uniform Block / Flash Memories) 3V Supply / Multiple Memory Product | |
5 | M3000 |
Unisonic Technologies |
PIR INFRARED REMOTE CONTROL CIRCUIT |