M30L0R7000T0 STMicroelectronics 128-Mbit (8Mb x 16 Multiple Bank Multi-Level Burst) 1.8V Supply Flash Memory Datasheet, en stock, prix

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M30L0R7000T0

STMicroelectronics
M30L0R7000T0
M30L0R7000T0 M30L0R7000T0
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Part Number M30L0R7000T0
Manufacturer STMicroelectronics (https://www.st.com/)
Description ..... . . . . . . . . . . 6 Figure 2. Table 1. Figure 3. Table 2. Figure 4. Logic Diagram . . . . . . . . . ...
Features SUMMARY









■ SUPPLY VOLTAGE
  – VDD = 1.7V to 2.0V for program, erase and read
  – VDDQ = 1.7V to 2.0V for I/O Buffers
  – VPP = 9V for fast program (12V tolerant) SYNCHRONOUS / ASYNCHRONOUS READ
  – Synchronous Burst Read mode: 54MHz
  – Asynchronous Page Read mode
  – Random Access: 85ns SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME
  – 10µs typical Word program time using Buffer Program MEMORY ORGANIZATION
  – Multiple Bank Memory Array: 8 Mbit Banks
  – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS
  – program/erase in one Bank while read in others
  – No delay between read ...

Document Datasheet M30L0R7000T0 Data Sheet
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