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2SC3550 |
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| Part Number | 2SC3550 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 900V; IE=0
IEBO
Emitter Cutoff Current
VEB= 10V; IC=0
hFE
DC Current Gain
IC= 1A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A, IB1= 0.4A; IB2= -0.8A; RL=... |
| Document |
 2SC3550 Data Sheet
PDF 199.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3551 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3551 |
Fuji Electric |
Transistor |
|
| 3 | 2SC3551 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC3552 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC3552 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|