2SD1714 Inchange Semiconductor Power Transistor Datasheet, en stock, prix

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2SD1714

Inchange Semiconductor
2SD1714
2SD1714 2SD1714
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Part Number 2SD1714
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1159 ·Minimum Lot-to-Lot variations for robust device performanc...
Features uration Voltage IC= 5A; IB= 0.5A VBE(on) Base -Emitter On Voltage IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain IC= 5A; VCE= 5V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V MIN TYP. MAX UNIT 2.0 V 1.8 V 50 μA 50 μA 20 60 200 20 90 pF 20 MHz
 hFE-2 Classifications Q S P 60-120 80-160 100-200 NOTICE: ISC reserves the rights to make...

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