2SD1336 |
Part Number | 2SD1336 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance ... |
Features |
er Sustaining Voltage IC= 50mA; L= 10mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 12.5mA
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
hFE
DC Current Gain
IC= 5A; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= IB2= 12.5mA; VCC= 50V
MIN TYP. MAX UNIT
100
V
8
V
1.5
V
2.5
V
100 μA
1500
20
MHz
0.7
μs
4.0
μs
1.5
μs
NOTICE: ISC re... |
Document |
2SD1336 Data Sheet
PDF 213.00KB |
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