2SD1336 Inchange Semiconductor Power Transistor Datasheet, en stock, prix

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2SD1336

Inchange Semiconductor
2SD1336
2SD1336 2SD1336
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Part Number 2SD1336
Manufacturer Inchange Semiconductor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance ...
Features er Sustaining Voltage IC= 50mA; L= 10mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 12.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 12.5mA ICBO Collector Cutoff Current VCB= 150V; IE= 0 hFE DC Current Gain IC= 5A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V; f= 1MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IC= 5A, IB1= IB2= 12.5mA; VCC= 50V MIN TYP. MAX UNIT 100 V 8 V 1.5 V 2.5 V 100 μA 1500 20 MHz 0.7 μs 4.0 μs 1.5 μs NOTICE: ISC re...

Document Datasheet 2SD1336 Data Sheet
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