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STS30N3LLH6 |
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| Part Number | STS30N3LLH6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard packag... |
| Features |
Type STS30N3LLH6
■ ■ ■ ■ ■ VDSS 30 V RDS(on) max 0.0024 Ω ID 30 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, wh... |
| Document |
 STS30N3LLH6 Data Sheet
PDF 803.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STS30-DIS |
SENSIRION |
High-Accuracy Digital Temperature Sensor |
|
| 2 | STS30B6.0 |
SEMIWILL |
Thyristor Surge Suppresser |
|
| 3 | STS31-DIS |
SENSIRION |
High-Accuracy Digital Temperature Sensor |
|
| 4 | STS3116E |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 5 | STS3400 |
SamHop Microelectronics |
N-Channel E nhancement Mode F ield E ffect Trans is tor |
|