IBM0436A81BLAB |
Part Number | IBM0436A81BLAB |
Manufacturer | IBM Corporation |
Description | The 4Mb and 8Mb SRAMs—IBM0436A41BLAB, IBM0418A41BLAB, IBM0418A81BLAB, and IBM0436A81BLAB—are Synchronous Pipeline Mode, high-performance CMOS Static Random Access Memories that are versatile, wide I/O... |
Features |
IBM0418A81BLAB IBM0436A81BLAB IBM0418A41BLAB IBM0436A41BLAB 8Mb (256Kx36 & 512x18) and 4Mb (128Kx36 & 256Kx18) SRAM
• 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology • Synchronous Pipeline Mode of Operation with Self-Timed Late Write • Single Differential HSTL Clock • +2.5V Power Supply, Ground, 1.5, 1.8V VDDQ, and 0.90V VREF • HSTL Input and Output levels • Registered Addresses, Write Enables, Synchronous Select, and Data Ins • Registered Outputs • Common I/O • Asynchronous Output Enable • Synchronous Power Down Input • Boun... |
Document |
IBM0436A81BLAB Data Sheet
PDF 380.58KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IBM0436A41BLAB |
IBM Corporation |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM | |
2 | IBM0418A41BLAB |
IBM Corporation |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM | |
3 | IBM0418A81BLAB |
IBM Corporation |
(IBM04xxAx1BLAB) 8Mb and 4Mb SRAM | |
4 | IBM0117805 |
IBM Microelectronics |
2M x 8 11/10 EDO DRAM | |
5 | IBM0117805PT3D60 |
IBM Microelectronics |
2M x 8 11/10 EDO DRAM |