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G4BC20F |
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| Part Number | G4BC20F |
| Manufacturer | International Rectifier |
| Description | www.DataSheet4U.com PD - 91602A IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Gene... |
| Features |
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.66V @VGE = 15V, IC = 9.0A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Param... |
| Document |
 G4BC20F Data Sheet
PDF 192.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | G4BC20FD |
International Rectifier |
IRG4BC20FD |
|
| 2 | G4BC20KD |
International Rectifier |
IRG4BC20KD |
|
| 3 | G4BC20U |
International Rectifier |
IRG4BC20U |
|
| 4 | G4BC20UD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | G4BC30FD |
International Rectifier |
IRG4BC30FD |
|