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AOT3N60 |
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| Part Number | AOT3N60 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(... |
| Features |
VDS (V) = 700V @ 150°C ID = 2.5A RDS(ON) < 3.5 Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss, C oss , C rss Tested!
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D TO-220
G G S D S
Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol VDS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 Continuous Drain TC=25°C 2.5 B Current TC=100°C ID 1.6 Pulsed Drain Current Avalanche Current
C C C
Units V V A A mJ mJ V/ns W W/ C °C °C
o
IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 54 1.2
8 2 60 120 5 59.5 0.48 -50 to 150 300 Maximum 65 0.5 2.1
Repetitive avalanche energy
Si... |
| Document |
 AOT3N60 Data Sheet
PDF 197.94KB |
| Distributor | Stock | Price | Buy |
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