2SK3637 |
Part Number | 2SK3637 |
Manufacturer | Guangdong Kexin Industrial |
Description | SMD Type www.DataSheet4U.com Transistors IC Silicon N-channel Power MOSFET 2SK3637 TO-263 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Low on-resistance, low Qg High avalanche resistance + 0 .1 1 ... |
Features |
Low on-resistance, low Qg High avalanche resistance
+ 0 .1 1 .2 7 -0 .1
+ 0 .2 8 .7 -0 .2
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
+ 0 .2 5 .2 8 -0 .2
2.54
+0.2 -0.2 +0.1 5.08-0.1
+ 0 .2 2 .5 4 -0 .2
+ 0 .2 1 5 .2 5 -0 .2
2.54
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 200 30 50 200 2 000 3 100 150 -55 to +150 Unit V V A A mJ W... |
Document |
2SK3637 Data Sheet
PDF 71.69KB |
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