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MSAER12N50A |
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| Part Number | MSAER12N50A |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 500 500 +/-20 +/-30 12 8 48 12 tbd 8 3.... |
| Features |
• • • • • • • Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC MAX. 500 500 +/-20 +/-30 12 8 48 12 tbd 8 3.5 300 -55 to +... |
| Document |
 MSAER12N50A Data Sheet
PDF 68.30KB |
| Distributor | Stock | Price | Buy |
|---|
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