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RJK0304DPB |
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| Part Number | RJK0304DPB |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | www.DataSheet4U.com RJK0304DPB Silicon N Channel Power MOS FET Power Switching REJ03G1352-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive cur... |
| Features |
• • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty ... |
| Document |
 RJK0304DPB Data Sheet
PDF 157.24KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK0301DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching |
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| 2 | RJK0302DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching |
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| 3 | RJK0303DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching |
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| 4 | RJK0305DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching |
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| 5 | RJK0316DSP |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching |
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