1GW3B2AN6 |
Part Number | 1GW3B2AN6 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | .... . . . . . . . . . . 7 Table 2. Figure 2. www.DataSheet4U.comFigure 3. Table 3. Figure 4. Figure 5. Figu... |
Features |
SUMMARY
www.DataSheet4U.com
■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V PAGE SIZE – x8 device: (2048 + 64 spare) Bytes – x16 device: (1024 + 32 spare) Words BLOCK SIZE – x8 device: (128K + 4K spare) Bytes – x16 device: (64K + 2K spare) Words PAGE READ / PROGRAM – Random a... |
Document |
1GW3B2AN6 Data Sheet
PDF 0.98MB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 1GWJ42 |
Toshiba Semiconductor |
SCHOTTKY BARRIER (HIGH SPEED RECTIFIER APPLICATIONS) | |
2 | 1GWJ43 |
Toshiba Semiconductor |
SCHOTTKY BARRIER (HIGH SPEED RECTIFIER APPLICATIONS) | |
3 | 1G1 |
GOOD-ARK Electronics |
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER | |
4 | 1G2 |
GOOD-ARK Electronics |
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER | |
5 | 1G3 |
GOOD-ARK Electronics |
MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER |