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GS8161E32B |
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| Part Number | GS8161E32B |
| Manufacturer | GSI Technology |
| Description | Applications The GS8161E18B(T/D)/GS8161E32B(D)/GS8161E36B(T/D) is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Lev... |
| Features |
• FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/ –10% core power supply • 2.5 V or 3.3 V I/O supply www.DataSheet4U.com • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP package • RoHS-compliant 100-lead TQFP an... |
| Document |
 GS8161E32B Data Sheet
PDF 1.99MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GS8161E32 |
GSI |
(GS8161E18 - GS8161E36) Sync Burst SRAMs |
|
| 2 | GS8161E32D |
GSI Technology |
18Mb SyncBurst SRAMs |
|
| 3 | GS8161E32DD |
GSI Technology |
18Mb SyncBurst SRAMs |
|
| 4 | GS8161E36 |
GSI |
(GS8161E18 - GS8161E36) Sync Burst SRAMs |
|
| 5 | GS8161E36B |
GSI Technology |
(GS8161E18B - GS8161E36B) Sync Burst SRAMs |
|