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K3561 |
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| Part Number | K3561 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfe... |
| Features |
under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
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| Document |
 K3561 Data Sheet
PDF 227.47KB |
| Distributor | Stock | Price | Buy |
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