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HY27SS08561M |
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| Part Number | HY27SS08561M |
| Manufacturer | Hynix Semiconductor |
| Description | of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation ... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width. - Multiplexed Address/ Data
www.DataSheet4U.com - Pinout compatibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support - Automatic Memory Download
Memory... |
| Document |
 HY27SS08561M Data Sheet
PDF 800.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HY27SS08561A |
Hynix Semiconductor |
(HY27xxxx561A) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash |
|
| 2 | HY27SS08121A |
Hynix Semiconductor |
512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory |
|
| 3 | HY27SS08121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
|
| 4 | HY27SS16121A |
Hynix Semiconductor |
512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory |
|
| 5 | HY27SS16121M |
Hynix Semiconductor |
(HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash |
|