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3DD13002 |
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| Part Number | 3DD13002 |
| Manufacturer | TRANSYS Electronics |
| Description | Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13002 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-251 w.DataSheet4U.com 1.25 W (Tamb=25℃) 1. BASE 2. COLLEC... |
| Features |
Power dissipation PCM:
TRANSISTOR (NPN)
TO-251
w.DataSheet4U.com
1.25
W (Tamb=25℃)
1. BASE 2. COLLECTOR 3. EMITTER
Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage... |
| Document |
 3DD13002 Data Sheet
PDF 85.17KB |
| Distributor | Stock | Price | Buy |
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