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W13NB60 |
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| Part Number | W13NB60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Value STW 13NB60 STH13NB60FP 600 600 ± 30 13 8.2 52 190 1.52 4 -65 to 150 150 ( 1) ISD ≤ 13 A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)D... |
| Document |
 W13NB60 Data Sheet
PDF 143.76KB |
| Distributor | Stock | Price | Buy |
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