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2N5172 |
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| Part Number | 2N5172 |
| Manufacturer | Diotec Semiconductor |
| Description | 2N5172 2N5172 NPN Version 2006-05-15 Power dissipation Verlustleistung E BC General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN 625 mW TO-9... |
| Features |
j = 25°C) Min. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 10 V, IC = 10 mA Small-Signal current gain – Kleinsignal-Stromverstärkung VCE = 10 V, IC = 1 mA, f = 1.0 kHz Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 25 V (E open) VCB = 25 V, Tj = 100°C (E open) Collector-Emitter cutoff current – Kollektorreststrom VCE = 25 V (B-E short) Emitter-Base-cutoff current – Emitter-Basis-Reststrom VEB = 5 V (C open) IEBO – ICES – ICBO ICBO – – hfe 100 hFE 100 Kennwerte (Tj = 25°C) Typ. – – – – – – Max. 500 750 100 nA 10 µA 100 nA 100 nA 1 Valid if leads are kept at ambie... |
| Document |
 2N5172 Data Sheet
PDF 134.61KB |
| Distributor | Stock | Price | Buy |
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