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K8F5715ETM |
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| Part Number | K8F5715ETM |
| Manufacturer | Samsung Electronics |
| Description | and Figure of DPD Correct typo Move address tables to the end of specification Correct note number on Command Sequence table Change tGHWL(Read Recovery Time Before Write) 0ns(typ.) ==> 0ns(min.) Chang... |
| Features |
GENERAL DESCRIPTION
• Single Voltage, 1.7V to 1.95V for Read and Write operations The K8F56(57)15E featuring single 1.8V power supply is a • Organization 256Mbit Muxed Burst Multi Bank Flash Memory organized as - 16,777,216 x 16 bit (Word Mode Only) 16Mx16. The memory architecture of the device is designed to • Multiplexed Data and Address for reduction of interconnections divide its memory arrays into 259 blocks with independent hard- A/DQ0 ~ A/DQ15 ware protection. This block architecture provides highly flexible • Read While Program/Erase Operation erase and program capability. The K8F56(57... |
| Document |
 K8F5715ETM Data Sheet
PDF 1.53MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K8F5715EBM |
Samsung Electronics |
256Mb M-die MLC NOR Specification |
|
| 2 | K8F5615EBM |
Samsung Electronics |
256Mb M-die MLC NOR Specification |
|
| 3 | K8F5615ETM |
Samsung Electronics |
256Mb M-die MLC NOR Specification |
|
| 4 | K8006 |
ETC |
BASE UNIT |
|
| 5 | K80E07NE |
Toshiba |
TK80E07NE |
|