Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
H5N3011P |
Click to view a larger image
| Part Number | H5N3011P |
| Manufacturer | Renesas (https://www.renesas.com/) Technology |
| Description | H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Dra... |
| Features |
• Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch No... |
| Document |
 H5N3011P Data Sheet
PDF 107.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H5N3011P |
INCHANGE |
N-Channel MOSFET |
|
| 2 | H5N3003P |
Renesas Technology |
N-Channel MOSFET |
|
| 3 | H5N3004P |
Renesas Technology |
N-Channel MOSFET |
|
| 4 | H5N3005LD |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|
| 5 | H5N3005LM |
Renesas Technology |
Silicon N Channel MOS FET High Speed Power Switching |
|