CM600HB-90H |
Part Number | CM600HB-90H |
Manufacturer | Mitsubishi Electric |
Description | www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM600HB-90H q IC ........ |
Features |
Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 85°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 4500 ±20 600 1200 600 1200 7400 –40 ~ +125 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N ·m N ·m N ·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals sc... |
Document |
CM600HB-90H Data Sheet
PDF 88.72KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CM600HB-90H |
Powerex Power Semiconductors |
IGBT Module | |
2 | CM600HB-24A |
Powerex |
IGBT | |
3 | CM600HA-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
4 | CM600HA-12H |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM600HA-24A |
Mitsubishi |
IGBT |