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2SC3807C |
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| Part Number | 2SC3807C |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet4U.com Ordering number : ENA0439 2SC3807C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C Applications • 25V / 2A High-hFE, Low Frequency General-Pu... |
| Features |
• • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 30 25 17 2 4 1.2 15 150 --55 to +150 Unit V V V A A W W °C °C Any and all SANYO Semiconduct... |
| Document |
 2SC3807C Data Sheet
PDF 72.45KB |
| Distributor | Stock | Price | Buy |
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