GE04N70B |
Part Number | GE04N70B |
Manufacturer | GTM |
Description | Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 ... |
Features |
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current
1,
Symbol A/H VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 650/700 20 4 2.5 15 62.5 0.5 100 4 4 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear De... |
Document |
GE04N70B Data Sheet
PDF 314.60KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GE01N60 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | GE02N60 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | GE03N70 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | GE07N70C-A |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | GE08P20 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |