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GE02N60 |
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| Part Number | GE02N60 |
| Manufacturer | GTM |
| Description | The GE02N60 provide the designer with the best combination of fast switching. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for DC-DC, D... |
| Features |
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 600 ±20 2 1.26 6 39 0.31 200 2 2 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Fact... |
| Document |
 GE02N60 Data Sheet
PDF 281.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GE01N60 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 2 | GE03N70 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | GE04N70B |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | GE07N70C-A |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 5 | GE08P20 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|