SPB100N08S2-07 |
Part Number | SPB100N08S2-07 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
P100N08S2-07 SPB100N08S2-07
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
3)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 75 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold voltage, VGS = V DS
ID =250µA
Zero ga... |
Document |
SPB100N08S2-07 Data Sheet
PDF 337.82KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB100N08S2-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
2 | SPB100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPB100N08S2L-07 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPB100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPB100N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |