2SK3550-01R |
Part Number | 2SK3550-01R |
Manufacturer | Fuji Electric |
Description | www.DataSheet4U.com Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3550-01R (900V/1.4Ω/10A) TO-3PF PRELIMINARY 1) Package Items Drain-Source Voltage Continuous Drain Current Pulsed Dr... |
Features |
Symbols
3)Electrical Characteristics (Tch=25 •Ž unless otherwise specified) min. 900 3.0 --------------------10 --typ. ------------1350 150 7.5 37 12 10 --1.0 max. --5.0 25 250 100 1.4 ƒ¶ pF --------------1.5 Units V V ƒÊ A ƒÊ A nA Items Symbols Test Conditions ID=250uA VGS=0V Drain-Source Breakdown Voltage BVDSS VGS(th) ID=250uA VDS=VGS Gate Threshold Voltage Tch=25 VDS=900V Zero Gate Voltage Drain Current IDSS Tch=125 VGS=0V I V =±30V V Gate-Source Leakage Current GSS GS DS=0V Drain-Source On-State Resistance RDS(on) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total ... |
Document |
2SK3550-01R Data Sheet
PDF 58.31KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3550-01R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK355 |
Toshiba |
N-Channel Transistor | |
3 | 2SK3554-01 |
Fuji Electric |
N-Channel MOSFET | |
4 | 2SK3554-01 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK3555-01MR |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |