BF1212WR NXP N-channel dual-gate MOS-FETs Datasheet, en stock, prix

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BF1212WR

NXP
BF1212WR
BF1212WR BF1212WR
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Part Number BF1212WR
Manufacturer NXP (https://www.nxp.com/)
Description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF12...
Features
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier
• Excellent low frequency noise performance
• Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS
• Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input vol...

Document Datasheet BF1212WR Data Sheet
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