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IRF6215S |
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| Part Number | IRF6215S |
| Manufacturer | International Rectifier |
| Description | l l D VDSS = -150V RDS(on) = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar... |
| Features |
tance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF6215L) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operat... |
| Document |
 IRF6215S Data Sheet
PDF 199.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF6215 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF6215L |
International Rectifier |
(IRF6215L/S) HEXFET Power MOSFET |
|
| 3 | IRF6215LPBF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF6215PBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRF6215SPBF |
International Rectifier |
Power MOSFET |
|