CEU3172 |
Part Number | CEU3172 |
Manufacturer | CET |
Description | CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). Hig... |
Features |
30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
36 140 42 0.33 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above... |
Document |
CEU3172 Data Sheet
PDF 104.12KB |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | CEU3100 |
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2 | CEU3120 |
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3 | CEU301J |
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4 | CEU3055L |
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5 | CEU3055L3 |
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