CEU3120 |
Part Number | CEU3120 |
Manufacturer | CET |
Description | CED3120/CEU3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). Hi... |
Features |
30V, 36A , RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
36 144 33 0.26 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate abov... |
Document |
CEU3120 Data Sheet
PDF 242.36KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU3100 |
CET |
N-Channel MOSFET | |
2 | CEU3172 |
CET |
N-Channel MOSFET | |
3 | CEU301J |
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Disc Ceramic Capacitors | |
4 | CEU3055L |
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N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEU3055L3 |
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