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CEU3070 |
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| Part Number | CEU3070 |
| Manufacturer | CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and c... |
| Features |
30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED3070/CEU3070
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
62 240 60 0.48 -55 to 150
Maximum Power Dissipation @ TC ... |
| Document |
 CEU3070 Data Sheet
PDF 400.26KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | CEU301J |
Mallory |
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| 2 | CEU3055L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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| 3 | CEU3055L3 |
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| 4 | CEU3055L5 |
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| 5 | CEU3060 |
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