CEM4953A |
Part Number | CEM4953A |
Manufacturer | CET |
Description | CEM4953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). ... |
Features |
-30V, -4.5A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7 D2 6 D2 5
PRELIMINARY
5
SO-8 1
1 S1 2 G1 3 S2 4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
±20
-4.5 -15 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range... |
Document |
CEM4953A Data Sheet
PDF 108.79KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CEM4953 |
Chino-Excel Technology |
Dual P-Channel Enhancement Mode MOSFET | |
2 | CEM4953H |
CET |
Dual P-Channel MOSFET | |
3 | CEM4954 |
Chino-Excel Technology |
Dual P-Channel Enhancement Mode MOSFET | |
4 | CEM4955 |
CET |
Dual P-Channel MOSFET | |
5 | CEM4936 |
Chino-Excel Technology |
Dual N-Channel Enhancement Mode Field Effect Transistor |