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TIP112 |
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| Part Number | TIP112 |
| Manufacturer | UTC |
| Description | UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * ... |
| Features |
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min) * Low Collector-Emitter Saturation Voltage * Industrial Use
EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)
B
C
E
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
SYMBOL
VCBO www.DataSheet4U.com VCEO VEBO Ic Icp IB Pc Pc Tj TSTG
VALUE
100 100 5 2 4 50 2 50 150 -65 ~ +150
UNIT
V V V A A mA W W... |
| Document |
 TIP112 Data Sheet
PDF 128.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP110 |
INCHANGE |
NPN Transistor |
|
| 2 | TIP110 |
MCC |
Silicon NPN Darlington Power Transistor |
|
| 3 | TIP110 |
RECTRON |
Power Transistors |
|
| 4 | TIP110 |
Motorola |
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | TIP110 |
Power Innovations Limited |
NPN SILICON POWER DARLINGTONS |
|