STW12NA50 |
Part Number | STW12NA50 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g... |
Features |
ge (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 ± 30 11.6 7.3 46.4 170 1.36 -65 to 150 150
Unit V V V A A A W W/o C
o o
C C
( •) Pulse width limited by safe operating area December 1995 1/9 STW12NA50 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For ... |
Document |
STW12NA50 Data Sheet
PDF 169.23KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | STW12NA60 |
ST Microelectronics |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
2 | STW12N120K5 |
STMicroelectronics |
N-CHANNEL Power MOS MOSFET | |
3 | STW12N150K5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STW12N170K5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STW12N60 |
ST Microelectronics |
N-Channel Enhancement Mode Fast Power MOS Transistor |