STW12NA50 ST Microelectronics N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Datasheet, en stock, prix

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STW12NA50

ST Microelectronics
STW12NA50
STW12NA50 STW12NA50
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Part Number STW12NA50
Manufacturer STMicroelectronics (https://www.st.com/)
Description This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and g...
Features ge (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 500 500 ± 30 11.6 7.3 46.4 170 1.36 -65 to 150 150 Unit V V V A A A W W/o C o o C C (
•) Pulse width limited by safe operating area December 1995 1/9 STW12NA50 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For ...

Document Datasheet STW12NA50 Data Sheet
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