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MTD5N25E |
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| Part Number | MTD5N25E |
| Manufacturer | Motorola |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD5N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mod... |
| Features |
2500 Unit Tape & Reel, Add – T4 Suffix to Part Number ™ Data Sheet MTD5N25E Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM ® D CASE 369A –13, Style 2 DPAK G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous — Non –repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and... |
| Document |
 MTD5N25E Data Sheet
PDF 193.22KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTD5N25E |
ON Semiconductor |
Power MOSFET |
|
| 2 | MTD5N05 |
Motorola |
(MTD5N05 / MTD5N06) Power Field Effect Transistors |
|
| 3 | MTD5N06 |
Motorola |
(MTD5N05 / MTD5N06) Power Field Effect Transistors |
|
| 4 | MTD5010M |
Marktech Corporate |
Ultra High Speed Photo Diode |
|
| 5 | MTD502E |
Myson |
2 Port 10M/100M Switch |
|