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MA4AGBLP912 |
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| Part Number | MA4AGBLP912 |
| Manufacturer | Tyco Electronics |
| Description | M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” res... |
| Features |
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Outline ( Topview )
Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver Silicon Nitride Passivation Polyamide Scratch Protection
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Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitaxial wafer using a process... |
| Document |
 MA4AGBLP912 Data Sheet
PDF 113.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MA4AGBLP912 |
MA-COM |
AlGaAs Beamlead PIN Diode |
|
| 2 | MA4AGBL912 |
MA-COM |
AlGaAs Beamlead PIN Diode |
|
| 3 | MA4AGCP910 |
Tyco Electronics |
AlGaAs Flip-Chip PIN Diode |
|
| 4 | MA4AGFCP910 |
Tyco Electronics |
AlGaAs Flip-Chip PIN Diode |
|
| 5 | MA4AGFCP910 |
MA-COM |
AlGaAs Flip Chip PIN Diodes |
|