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HL6341MG |
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| Part Number | HL6341MG |
| Manufacturer | Hitachi |
| Description | The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These ar... |
| Features |
• • • • • • • Optical output power : 5 mW CW Single longitudinal mode Visible light power : 635 nm Typ Low operating current : 25 mA Typ Low aspect ratio : 1.2 Typ Operating temperature : +50°C TM mode oscillation Package Type • HL6340MG/41MG: MG Internal Circuit • HL6340MG 1 3 Internal Circuit • HL6341MG 1 3 PD LD PD LD 2 2 HL6340MG/41MG Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO PO(Pulse) VR(LD) VR(PD) Topr Tstg Value 5 6* 2 30 –10 to +50 –40 to +85... |
| Document |
 HL6341MG Data Sheet
PDF 259.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HL6340MG |
Hitachi |
(HL6340MG / HL6341MG) Circular Beam Low Operating Current |
|
| 2 | HL6342G |
Hitachi Semiconductor |
(HL6339G / HL6342G) 633nm Lasing Laser Diode |
|
| 3 | HL63101MG |
USHIO |
AlGaInP Laser Diode |
|
| 4 | HL63102MG |
USHIO |
AlGaInP Laser Diode |
|
| 5 | HL6312G |
Hitachi Semiconductor |
(HL6312G / HL6313G) AlGaInP Laser Diodes |
|