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K4M51163LC |
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| Part Number | K4M51163LC |
| Manufacturer | Samsung semiconductor |
| Description | The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design al... |
| Features |
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial ... |
| Document |
 K4M51163LC Data Sheet
PDF 139.70KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K4M51163LE |
Samsung semiconductor |
8M x 16Bit x 4 Banks Mobile SDRAM |
|
| 2 | K4M511633C |
Samsung semiconductor |
8M x 16Bit x 4 Banks Mobile SDRAM |
|
| 3 | K4M511633E |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 4 | K4M511633E-C |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|
| 5 | K4M511633E-F1H |
Samsung |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
|