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IRFZ24NLPBF |
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| Part Number | IRFZ24NLPBF |
| Manufacturer | International Rectifier |
| Description | Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processin... |
| Features |
g surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Opera... |
| Document |
 IRFZ24NLPBF Data Sheet
PDF 818.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ24NLPbF |
INCHANGE |
N-Channel MOSFET |
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| 2 | IRFZ24NL |
International Rectifier |
Power MOSFET |
|
| 3 | IRFZ24NL |
TRANSYS |
Power MOSFET |
|
| 4 | IRFZ24N |
NXP |
N-channel enhancement mode TrenchMOS transistor |
|
| 5 | IRFZ24N |
International Rectifier |
Power MOSFET |
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