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E3055T |
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| Part Number | E3055T |
| Manufacturer | ETC |
| Description | Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose SILICON EPITAXIAL PLANAR TRANSISTOR QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0... |
| Features |
ECTRICAL CHARACTERISTICS
SYMBOL
ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf
PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time
CONDITIONS VCB=70V VEB=5V IC=1mA IC = 4.0A; IB = 0.4A IC = 4.0A; VCE = 4V IC = 0.5A; VCE = 10V VCB = 10V
MIN 60 20 5
MAX 1.0 2.5 1.2 100 350
UNIT mA mA v V MHz pF us us us
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshin... |
| Document |
 E3055T Data Sheet
PDF 91.95KB |
| Distributor | Stock | Price | Buy |
|---|
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