2SK3579-01MR |
Part Number | 2SK3579-01MR |
Manufacturer | Fuji Semiconductors |
Description | www.DataSheet4U.com 2SK3579-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Lo... |
Features |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit 150 V 130 V Continuous drain current ±23 A Pulsed drain current ±96 A Gate-source voltage ±20 V Repetitive or non-repetitive 23 A Maximum Avalanche Energy 242 mJ Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 2.1 W 40 Operating and storage Tch +150 °C -55 to +15... |
Document |
2SK3579-01MR Data Sheet
PDF 275.61KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK3579-01MR |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK357 |
Toshiba |
N-Channel MOSFET | |
3 | 2SK357 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK3570 |
NEC Electronics |
Switching N-Channel MOSFET | |
5 | 2SK3570 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |