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W8NB90 |
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| Part Number | W8NB90 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled wit... |
| Features |
er Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value STW8NB90 900 900 ±30 8 5 32 200 1.6 4 –65 to 150 150 2500 5 3 20 80 0.64 STH8NB90FI Unit V V V A A A W W/°C V/ns V °C °C ( •)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200... |
| Document |
 W8NB90 Data Sheet
PDF 258.86KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | W8NB100 |
ST Microelectronics |
STW8NB100 |
|
| 2 | W8NB80 |
ST Microelectronics |
STW8NB80 |
|
| 3 | W8NC90Z |
STMicroelectronics |
STW8NC90Z |
|
| 4 | W80NF06 |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 5 | W80NF55-06 |
STMicroelectronics |
STW80NF55-06 |
|