2SC5480 Hitachi Semiconductor Silicon NPN Triple Diffused Planar Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SC5480

Hitachi Semiconductor
2SC5480
2SC5480 2SC5480
zoom Click to view a larger image
Part Number 2SC5480
Manufacturer Hitachi Semiconductor
Description 2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper ...
Features
• High breakdown voltage VCES = 1500 V
• Isolated package TO
  –3PFM
• Built-in damper diode Outline TO
  –3PFM C 2 1 B 3 E 1 2 3 1. Base 2. Collector 3. Emitter www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com 2SC5480 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1. Value at Tc = 25° C Symbol VCES VEBO IC ic(peak) PC Tj Tstg ID Note1 Ratings 1500 5 14 28 50 150
  –55 to +1...

Document Datasheet 2SC5480 Data Sheet
PDF 62.25KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC5480
Inchange Semiconductor
Silicon NPN Power Transistor Datasheet
2 2SC5482
ETC
NPN TRANSISTOR Datasheet
3 2SC5484
ETC
NPN TRANSISTOR Datasheet
4 2SC5485
ETC
NPN Transistor Datasheet
5 2SC5488
Sanyo Semicon Device
NPN TRANSISTOR Datasheet
More datasheet from Hitachi Semiconductor



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact