STU10NC70Z ST Microelectronics N-Channel MOSFET Datasheet, en stock, prix

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STU10NC70Z

ST Microelectronics
STU10NC70Z
STU10NC70Z STU10NC70Z
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Part Number STU10NC70Z
Manufacturer STMicroelectronics (https://www.st.com/)
Description The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arr...
Features OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU10NC70Z/STU10NC70ZI Safe Operating Area For Max220 Safe Operating Area For I-Max220 Thermal Impedance F...

Document Datasheet STU10NC70Z Data Sheet
PDF 142.96KB
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